器件名称:
2N5660
功能描述:
Silicon NPN Power Transistors
文件大小:
115.16KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5660 2N5661 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5660 Collector-base voltage 2N5661 2N5660 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5661 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=100 Ta=25 Open collector Open base 300 6 2.0 0.5 20 W 2 200 -65~200 V A A Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5660 IC=10mA ; IB=0 2N5661 IE=10A ; IC=0 IC=1A; IB=0.1A IC=2A; IB=0.4A IC=1A ;IB=0.1A IC=2A; IB=0.4A VCE=200V;VBE(off)=1.5V CONDITIONS SYMBOL 2N5660 2N5661 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 0.4 0.8 1.2 1.5 V V V V V V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitte……
