器件名称:
2N5660
功能描述:
Silicon NPN Transistor
文件大小:
204.8KB 共2页
简 介:
2N5660 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N5660J) JANTX level (2N5660JX) JANTXV level (2N5660JV) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV Radiation testing (total dose) upon request Applications General purpose Power Transistor NPN silicon transistor Features Hermetically sealed TO-66 metal can Also available in chip configuration Chip geometry 1031 Reference document: MIL-PRF-19500/454 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Qualification Levels: JAN, JANTX, and JANTXV Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TJ TSTG Rating 200 250 6 2 2 11.4 20 200 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5660 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics P……
