器件名称:
2N5665
功能描述:
Silicon NPN Power Transistors
文件大小:
114.87KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5664 2N5665 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5664 Collector-base voltage 2N5665 2N5664 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5665 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 300 6 5.0 1.0 52.5 200 -65~200 V A A W Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10mA ; IB=0 2N5665 IE=10A ; IC=0 IC=3A; IB=0.3A CONDITIONS SYMBOL 2N5664 2N5665 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 V V(BR)EBO Emitter-base breakdown voltage Collector-emitter saturation voltage 2N5664 2N5665 VCEsat-1 0.4 IC=3A; IB=0.6A IC=5A; IB=1A IC=3A; IB=0.3A 1.2 2N5665 IC=3A; IB=0.6A IC=5A; IB=1A VCE=200V;VBE(off)=1.5V 0.2 2N5665 2N5664 VCE=300V;VBE(off)=1.5V VCB=250V……
