器件名称:
2N5665
功能描述:
NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
文件大小:
60.16KB 共2页
简 介:
TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Level JAN JANTX JANTXV Devices 2N5666 2N5666S 2N5667 2N5667S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current 2N5664 2N5665 Symbol 2N5666, S 2N5667, S Unit VCEO VCBO VEBO IB IC 200 250 6.0 1.0 5.0 2N5664 2N5666, S 2N5665 2N5667, S 2.5 (1) 1.2 (2) (3) 30 15 (4) -65 to +200 300 400 Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5664, 2N5665 @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 1) Derate linearly 14.3 mW/0C for TA > +250C 2) Derate linearly 6.9 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC >+1000C 4) Derate linearly 150 mW/0C for TC > +1000C Total Power Dissipation PT TJ, Tstg W W 0 C TO-5* 2N5666, 2N5667 TO-39* (TO-205AD) 2N5666S, 2N5667S *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 Adc Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc 2N5664, 2N5666, S 2N5665, 2N5667, S V(BR)CER 250 400 6.0 0.2 0.2 Vdc V(BR)EBO 2N5664, 2N5666, S 2N5665, 2N5667, S ICES Vdc Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5664, 2N5665, 2N5666,……
