器件名称:
2N5742
功能描述:
Silicon PNP Power Transistors
文件大小:
110.29KB 共3页
简 介:
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage ·Fast switching speed APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N5741 Collector-base voltage 2N5742 2N5741 VCEO VEBO IC PC Tj Tstg Collector-emitter voltage 2N5742 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=100℃ Open collector Open base 100 5 20 65 150 -65~200 V A W ℃ ℃ Open emitter 100 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N5741 IC=0.2A ;IB=0 2N5742 IC=10A; IB=1A IC=20A ;IB=4A IC=10A; IB=1A IC=10A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VEB=5V; IC=0 IC=10A ; VCE=5V IC=20A ; VCE=5V IC=1A ; VCE=10V CONDITIONS 2N5741 2N5742 MIN 60 TYP. MAX UNIT VCEO V 100 1.0 3.0 1.8 1.5 0.1 0.5 5.0 1.0 20 10 10 MHz 80 V V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emit……
