器件名称:
2N5742
功能描述:
Silicon PNP Power Transistors
文件大小:
122.23KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 固 导体 半 电 GE S 2N5741 2N5742 2N5741 2N5742 VCBO VCEO N A H INC Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector-base voltage Open emitter EMIC CONDITIONS OND R O T UC VALUE -60 -100 -60 -100 UNIT V Open base V VEBO IC PC Tj Tstg Open collector -5 -20 V A W ℃ ℃ Collector power dissipation TC=100℃ 65 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5741 VCEO(SUS) Collector-emitter sustaining voltage 2N5742 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current IC=-10A; IB=-1A IC=-20A ;IB=-4A IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VEB=-5V; IC=0 IC……
