器件名称:
2N5744
功能描述:
Silicon PNP Power Transistors
文件大小:
115.06KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION With TO-66 package Low collector saturation voltage Fast switching speed APPLICATIONS For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5743 VCBO Collector-base voltage 2N5744 2N5743 VCEO Collector-emitter voltage 2N5744 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=100 Open collector Open base -100 -5 -20 25 150 -65~200 V A W Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5743 IC=-0.2A ;IB=0 2N5744 IC=-10A; IB=-1A IC=-20A ;IB=-4A IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-10A ; VCE=-5V IC=-20A ; VCE=-5V IC=-1A ; VCE=-10V CONDITIONS SYMBOL 2N5743 2N5744 MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -100 -1.0 -3.0 -1.8 -1.5 -0.1 -0.5 -5.0 -1.0 20 10 10 MHz 80 V V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitt……
