器件名称:
2N5744
功能描述:
Silicon PNP Power Transistors
文件大小:
130.8KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 l Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 固 导体 半 电 S E G AN 2N5743 2N5744 2N5743 2N5744 Collector-base voltage Open emitter VCEO VEBO IC PC Tj Tstg INCH EMIC CONDITIONS OND R O T UC VALUE -60 -100 -60 -100 -5 -20 UNIT V Collector-emitter voltage Emitter-base voltage Collector current Open base V V A W ℃ ℃ Open collector Collector power dissipation Junction temperature Storage temperature TC=100℃ 25 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5743 IC=-0.2A ;IB=0 2N5744 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current IC=-10A; IB=-1A IC=-20A ;IB=-4A IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VEB=-5V; IC=0 IC=-10A ; VCE=-5V CONDITIONS 2N574……
