器件名称:
2N5883
功能描述:
Silicon PNP Power Transistors
文件大小:
113.54KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5883 Collector-base voltage 2N5884 2N5883 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5884 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -25 -50 -7.5 200 200 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5883 IC=-0.2A ;IB=0 2N5884 IC=-15A; IB=-1.5A IC=-25A ;IB=-6.25A IC=-25A ;IB=-6.25A IC=-10A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5883 ICEO Collector cut-off current 2N5884 Collector cut-off current (VBE(off)=1.5V) Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency Collector base capacitance VCE=-40V; IB=0 VCE=ratedVCEO; VCE=ratedVCEO; TC=150 VEB=-5V; IC=0 IC=-3A ; VCE=-V I……
