器件名称:
2N5956
功能描述:
Silicon PNP Power Transistors
文件大小:
136.68KB 共3页
简 介:
Product Specification www.jmnic.com Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 90 70 50 80 60 40 5 6 2 40 150 -65~200 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.3 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5954 VCEO(sus) Collector-emitter sustaining voltage 2N5955 2N5956 2N5954 VCEsat Collector-emitter saturation voltage 2N5955 2N5956 2N5954 VBE-1 Base-emitter on voltage 2N5955 2N5956 VBE-2 Base-emitter on voltage 2N5954 ICEO Collector cut-off current 2N5955 2N5956 ICEV IEBO Collector cut-off current(RBE=100Ω) Emitter cut-off current 2N5954 hFE-1 DC current gain 2N5955 2N5956 hFE-2 fT DC current gain Transition frequency I……
