器件名称:
2N5956
功能描述:
Silicon PNP Power Transistors
文件大小:
131.72KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·Complement to type 2N6372/6373/6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER CONDITIONS 2N5954 2N5955 VCBO Collector-base voltage VCEO A H C IN Emitter-base voltage Collector current Base current S E G N 2N5956 2N5954 2N5955 2N5956 Open emitter EMIC OND R O T UC VALUE -90 -70 -50 -80 -60 -40 UNIT V Collector-emitter voltage Open base V VEBO IC IB PD Tj Tstg Open collector -5 -6 -2 V A A W ℃ ℃ Total Power Dissipation Junction temperature Storage temperature TC=25℃ 40 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.3 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5954 VCEO(SUS) Collector-emitter sustaining voltage 2N5955 2N5956 2N5954 VCEsat Collector-emitter saturation voltage 2N5955 2N5956 2N5954 VBE-1 Base-emitter on voltage 2N5955 2N5956 IC=-2A; IB=-0.2A IC=-2.5A; IB=-0.25A IC=-3A; IB=-0.3A IC=-2A ; VCE=-4V IC=-2.5A ; VCE=-4V IC=-3A ; VCE=-4V IC=-6A ; VCE=-4V VCE=-65V; IB=0 VCE=-45V; IB=0 IC=-0.1A ;I……
