器件名称:
2N5973
功能描述:
Silicon NPN Power Transistors
文件大小:
98.56KB 共3页
简 介:
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5973 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 15 30 5 150 150 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustioning voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=7A ;IB=0.7A IC=15A; IB=3.75A IC=15A; IB=3.75A VCE=30V; IB=0 VCE=120V; VBE(off)=1.5V TC=150℃ VCB=120V; IE=0 VEB=5V; IC=0 IC=5……
