器件名称:
2N5973
功能描述:
Silicon NPN Power Transistors
文件大小:
121.8KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipations APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg 固 Collector-base voltage 导体 半 电 PARAMETER CONDITIONS Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG IC M E ES Open base Open collector TC=25℃ Open emitter OND R O T UC VALUE 120 100 5 15 30 5 150 150 -65~200 UNIT V V V A A A W ℃ ℃ Collector current-peak Total Power Dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=7A ;IB=0.7A IC=15A; IB=3.75A IC=15A; ……
