器件名称:
2N6044
功能描述:
Silicon NPN Power Transistors
文件大小:
106.54KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type 2N6040/6041/6042 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For general-purpose amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6043 2N6044 2N6045 Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2N6043 VCBO Collector-base voltage 2N6044 2N6045 2N6043 VCEO Collector-emitter voltage 2N6044 2N6045 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current-DC Collector current-Peak Base current-DC Total power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 8 16 120 75 2.2 150 -65~150 V A A mA W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.67 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6043 VCEO(SUS) Collector-emitter sustaining voltage 2N6044 2N6045 2N6043/6044 2N6045 IC=4A ,IB=16mA IC=30mA, IB=0 SYMBOL 2N6043 2N6044 2N6045 CONDITIONS MIN 60 80 100 TYP. MAX UNIT V VCEsat-1 Collector-emitter saturation voltage 2.0 IC=3A ,IB=12mA IC=8A ,IB=80mA IC=8A ,IB=80mA IC=4A ; VCE=4V VCB=Rated VCB, IE=0 VCE=RatedVCE, VBE=-1.5V TC=150 VCE=Rated VCE, IB=0 VEB=5V; IC=0 2N6043/6044 I……
