器件名称:
2N6044
功能描述:
Silicon NPN Power Transistors
文件大小:
138.31KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6040/6041/6042 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS ·For general-purpose amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6043 2N6044 2N6045 Absolute maximum ratings(Tc=25℃) SYMBOL 固 体 导 电半 PARAMETER 2N6043 2N6044 VCBO Collector-base voltage VCEO Collector-emitter voltage IN CHA M E S NG 2N6045 2N6043 2N6044 2N6045 Open emitter N O C I CONDITIONS R O T DUC VALUE 60 80 100 60 80 100 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current-DC Collector current-Peak Base current-DC Total power dissipation Junction temperature Storage temperature Open collector 5 8 16 120 V A A mA W ℃ ℃ TC=25℃ Ta=25℃ 75 2.2 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6043 VCEO(SUS) Collector-emitter sustaining voltage 2N6044 2N6045 2N6043/6044 2N6045 IC=4A ,IB=16mA IC=30mA, IB=0 2N6043 2N6044 2N6045 CONDITIONS MIN 60 80 100 TYP. MAX UNIT V VCEsat-1 Collector-emitter saturation voltage 2.0 IC=3A ,IB=12mA IC=8A ,IB=80mA IC=8A ,IB=80mA IC=4A ; VCE=4V VCB=Rated VCB,……
