器件名称:
2SA1216
功能描述:
isc Silicon PNP Power Transistor
文件大小:
115.91KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION High Collector-Emitter Breakdown VoltageV(BR)CEO= -180V(Min) Good Linearity of hFE Complement to Type 2SC2922 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ -5 A PC 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1216 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -2.0 V ICBO Collector Cutoff Current VCB= -180V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μA hFE DC Current Gain IC= -8A; VCE= -4V 30 180 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz 500 pF fT Current-Gain—Bandwidth Product IE= 2A; VCE= -12V 40 MHz Switching times ton Turn-on Time IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC= -40V 0.3 μs tstg Storage Time 0.7 μs tf Fall Time 0.2 μs hFE……
