器件名称:
2SA1216
功能描述:
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
文件大小:
24.36KB 共1页
简 介:
LAPT 2SA1216 Application : Audio and General Purpose (Ta=25°C) 2SA1216 –100max –100max –180min 30min –2.0max 40typ 500typ V MHz pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1216 –180 –180 –5 –17 –5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics SymboI VCBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–180V VEB=–5V IC=–25mA VCE=–4V, IC=–8A IC=–8A, IB=–0.8A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit A A V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL () 4 IC (A) –10 VB2 (V) 5 IB1 (A) –1 IB2 (A) 1 ton (s) 0.3typ tstg (s) 0.7typ tf (s) 0.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –1. 0 0m A V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –17 –15 Collector Current I C (A) (V C E =–4V) 5A –1 A 00 m A –17 –15 –5 –7 0m –40 A –3 00 m A Collector Current I C (A) –2 00 mA –10 –2 e T em p) Tem p) –150mA –10 –100mA –5 C( 125 –50mA C(C 25 I C =–10A –5A 0 0 I B =–20mA 0 0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –3……
