器件名称:
2SA673
功能描述:
PNP Silicon Plastic-Encapsulate Transistor
文件大小:
215.3KB 共2页
简 介:
2SA673/673A Elektronische Bauelemente PNP Silicon Plastic-Encapsulate Transistor TO-92 4.55±0.2 4.5±0.2 3.5±0.2 FEATURES * Low Frequency Amplifier * Complementary Pair with 2SC1213 and 2SC1213A * RoHS Compliant Product * A suffix of "-C" specifies halogen-free (1.27 Typ.) 1.25±0.2 14.3±0.2 1 2 3 2.54±0.1 1: Emitter 2: Base 3: Collector 0.43+0.08 0.46±0.1 –0.07 MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol VCBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature o o Parameter 2SA673 2SA673A 2SA673 2SA673A Value -35 -50 -35 -50 -4 -500 400 150 -55-150 Units V V V mA mW o VCEO VEBO IC PC TJ Tstg C C o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO *hFE(1) hFE(2) Collector-emitter saturation voltage Base-emitter voltage * Pulse test. *VCEsat VBE Test conditions 2SA67 3 2SA673A 2SA673 2SA673A MIN -35 -50 -35 -50 -4 -0.5 60 10 -0.6 -0.64 V V 320 TYP MAX UNIT V V V A IC=-10A,IE=0 IC=-1mA,IB=0 IE=-10A,IC=0 VCB= -20 V, IE=0 VCE=-3V, IC= -10mA VCE=-3V, IC=-500mA IC= -150mA, IB=-15mA VCE=-3V, IC=-10mA Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain CLASSIFICATION OF hFE(1) Rank Range B 60-120 C 100- 200 D 160-320 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specificat……
