器件名称: 2SA673
功能描述: Plastic-Encapsulated Transistors
文件大小: 66.41KB 共1页
简 介:Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA673
FEATURE Power dissipation PCM : 0.4 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TRANSISTOR (PNP) TO-92
1. EMITTER
2. COLLECTOR
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1)* DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCEsat * VBE
unless otherwise specified)
Test conditions MIN -35 -35 -4 -0.5 60 10 -0.6 -0.75 V V 320 TYP MAX UNIT V V V A
Ic= -10A , IE=0 IC=-1 mA , IB=0 IE=-10A, IC=0 VCB= -20 V , IE=0 VCE=-3V, IC= -10mA VCE=-3 V, IC=-500mA IC= -150mA, IB=-15mA VCE=-3 V, IC=-10mA
*Measured using pulse CLASSIFICATION OF hFE(1)
Rank Range B 60-120 C 100-200 D 160-320
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