器件名称: 2SC3856
功能描述: Silicon NPN Power Transistors
文件大小: 149.03KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3856
DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
固电
Collector-base voltage
体 导 半
PARAMETER
A H C IN
Collector current Base current
Collector-emitter voltage
Emitter-base voltage
EM S E NG
Open base TC=25℃
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 200 180 6 15 4 130 150 -55~150
UNIT V V V A A W ℃ ℃
Open collector
Collector power dissipation Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3856
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
180
V
VCEsat ICBO
Collector-emitter saturation voltage
IC=5A ;IB=0.5A VCB=200V ;IE=0
2.0
V μA μA
Collector cut-off current
100
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
hFE
DC current gain
IC=3A ; VCE=4V
50
180
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
300
pF
fT
Transition frequency
IC=0.5A ; VCE=12V
Switching times
ton
固电
Fall time
Turn-on time
体 导 半
ts
tf
INC
P
Storage time
EM S E G N A H
Y 90-180
IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V
D N O IC
R O T UC
0.50 1.80 0.……
