器件名称:
2SC3856
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
文件大小:
24.66KB 共1页
简 介:
2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3856 200 180 6 15 4 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 180min External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 2SC3856 Unit A A 19.9±0.3 4.0 V V pF 50min 2.0max 20typ 300typ MHz a b 3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (s) 0.5typ tstg (s) 1.8typ tf (s) 0.6typ 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 1A 0m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V CE =4V) 15 70 5 m 00 A 300m A Collector Current I C (A) Collector Current I C (A) 20 0m A 10 100 mA 2 10 mp) e Te Cas C ( 25C I B =20mA I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0 0 0 1 2 3 4 –30C 125 (Case 5 50mA 1 5 (Cas e Te 1 Base-Emittor Voltage V B E……
