器件名称:
2SD113
功能描述:
Silicon NPN Power Transistor
文件大小:
213.94KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD113 DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier, power switching applications. DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww s c s .i MAX 100 80 10 30 -30 5 UNIT V V n c . i m e V A IE Emitter Current-Continuous A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature A PC 200 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA; RBE= ∞ MIN TYP. 2SD113 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 10 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 1.5 V Base-Emitter Saturation Voltage IC= 15A; IB= 3A VCB= 50V; IE= 0 2.5 V Collector Cutoff Current 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product hFE-1 Classificat……
