器件名称:
2N3055A
功能描述:
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS
文件大小:
235.85KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. 2N3055A MJ15015* MJ2955A PNP MJ15016* *Motorola Preferred Device NPN *MAXIMUM RATINGS Rating Symbol VCEO VCBO VCEV 2N3055A MJ2955A 60 MJ15015 MJ15016 120 200 200 Unit Vdc Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage 100 100 Collector–Emitter Voltage Base Reversed Biased Emitter–Base Voltage VEBO IC IB 7.0 15 Collector Current — Continuous Base Current 7.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 115 0.65 180 1.03 Watts W/_C TJ, Tstg – 65 to + 200 Current–Gain — Bandwidth–Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) – NPN = 2.2 MHz (Min) – PNP Safe Operating Area — Rated to 60 V and 120 V, Respectively 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS CASE 1–07 TO–204AA (TO–3) _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max Max Unit Thermal Resistance, Junction to Case 1.52 0.98 _C……