器件名称:
2N3055G
功能描述:
Complementary Silicon Power Transistors
文件大小:
81.17KB 共4页
简 介:
2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 20 70 @ IC = 4 Adc CollectorEmitter Saturation Voltage Excellent Safe Operating Area PbFree Package is Available MAXIMUM RATINGS Rating http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 100 7 Collector Current Continuous Base Current 15 7 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 W W/°C °C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W MARKING DIAGRAM TO204AA (TO3) CASE 107 xxxx55 A YYWW THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 Thermal Resistance, JunctiontoCase 1.52 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 160 ORDERING INFORMATION Device……
