器件名称:
2N3055G
功能描述:
Complementary Silicon Power Transistors
文件大小:
71.17KB 共4页
简 介:
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for generalpurpose switching and amplifier applications. Features http://onsemi.com DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area PbFree Packages are Available* 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Value 60 70 100 7 15 7 115 0.657 65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc W W/°C °C TO204AA (TO3) CASE 107 STYLE 1 MAXIMUM RATINGS Rating CollectorEmitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCB VEB IC IB PD TJ, Tstg MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 160 PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 2N3055 2N3055G MJ2955 MJ2955G *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mountin……
