器件名称:
BC237
功能描述:
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
文件大小:
219.56KB 共1页
简 介:
DC COMPONENTS CO., LTD. R BC237 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Collector 2 = Base 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating 50 45 5 100 350 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 3 2 1 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCES BVCEO BVEBO ICES IEBO (1) Min 50 45 6 0.55 50 120 60 150 2% Typ - Max 15 100 0.2 0.6 1.05 0.83 0.7 800 4.5 Unit V V V nA nA V V V V V MHz pF Test Conditions IC=100A, VEB=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=50V, IE=0 VEB=4V, IC=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=2mA, VCE=5V IC=10A, VCE=5V IC=2mA, VCE=5V IC=100mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1……
