器件名称:
2SA0720
功能描述:
For low-frequency power amplification and driver amplification Complementary
文件大小:
81.93KB 共4页
简 介:
Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 ■ Features Complementary pair with 2SC1317 and 2SC1318 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 Parameter Collector-base voltage (Emitter open) 2SA0719 2SA0720 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 30 60 25 50 5 500 1 625 150 55 to +150 Unit V 0.45+0.15 –0.1 12.9±0.5 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.5+0.6 –0.2 ■ Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage 2SA0719 (Base open) 2SA0720 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 0.7±0.2 5.1±0.2 mA A mW °C °C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0719 2SA0720 2SA0719 2SA0720 VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = 50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 40 0.35 0.60 1.1 200 6 15 1.5 VCEO IC = 10 mA, IB = 0 Symbol VCBO Conditions IC = 10 A, IE = 0 Min 30 60 25 50 5 0.1 340 V A V V MHz pF V Typ Max Uni……
