器件名称:
2SA1193K
功能描述:
Silicon PNP Epitaxial, Darlington
文件大小:
34.75KB 共6页
简 介:
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.5 –1.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max — –1.0 –1.0 — –1.5 –2.0 — — V V s s I C = –250 mA I B1 = –IB2 = –0.5 mA Unit V A A Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 I C = –250 mA, IB = –0.5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off 2 2SA1193(K) Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A) –3 –1.0 0.6 –0.3 –0.1 –0.03 –0.01 –0.003 –3 iC (peak) IC max Area of Safe Operation PW t ho 1 s shot ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW Ta = 25°C 0.3 0 50 100 150 Ambient Temperature Ta (°C) –10 –30 –100 –300 Collector to Emiter Voltage VCE (V) Typical Outpu……
