器件名称:
2SA1310
功能描述:
Silicon PNP epitaxial planer type
文件大小:
37.52KB 共2页
简 介:
Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 2.8 –0.3 +0.2 Unit: mm s q q q Features High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 0.65±0.15 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 1.45 +0.2 1.1 –0.1 –150 –185 –150 –185 –5 –100 –50 200 150 –55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : I(2SB792) 2F(2SB792A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SB792 2SB792A (Ta=25C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –100A, IB = 0 IE = –10A, IC = 0 VCE = –5V, IC = –10mA IC = –30A, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB, Rg = 100k, Function = FLAT 200 4 150 –150 –185 –5 130 130 450 330 –1 V MHz pF mV min typ max –1 Unit A V V Emitter to base voltage Forward cur……
