器件名称: 2SA1310
功能描述: Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
文件大小: 37.4KB 共2页
简 介:Transistor
2SC3312
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SA1310
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 60 55 7 200 100 300 150 –55 ~ +150
Unit V V V mA mA mW C C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE
*
Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 30mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT
min
typ
max 0.1 1
2.0±0.2
marking
+0.2 0.45–0.1
s Absolute Maximum Ratings
(Ta=25C)
15.6±0.5
Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV.
Unit A A V V V
60 55 7 180 700 1 1 200 150
VCE(sat) VBE fT NV
V V MHz mV
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE
Rank
……
