器件名称:
MJF18008
功能描述:
Silicon NPN Power Transistors
文件大小:
96.74KB 共3页
简 介:
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ,high speed ·Improved efficiency due to low base rive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJF18008 · Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 8 16 4 8 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient VALUE 2.78 62.5 UNIT ℃/W ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage CONDITIONS IC=0.1A L=25mH IC=2A IB=0.2A TC=125℃ IC=4.5A IB=0.9A TC=125℃ IC=2A IB=0.2A IC=4.5A IB=0.9A VCES=RatedVCES; VEB=0 TC=125℃ VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cu……
