器件名称:
MJF18008
功能描述:
Silicon NPN Power Transistors
文件大小:
122.44KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJF18008 DESCRIPTION ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg 固电 Collector-base voltage Collector-emitter voltage 体 导 半 PARAMETER INC Emitter-base voltage Collector current (DC) EM S E G N A H Open base TC=25℃ Open emitter D N O IC CONDITIONS R O T UC VALUE 1000 450 9 10 16 4 8 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ Open collector Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient VALUE 2.78 62.5 UNIT ℃/W ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=2A; IB=0.2A TC=125℃ IC=4.5A; IB=0.9A TC=125℃ IC=2A ;IB=0.2A IC=4.5A; IB=0.9A VCES=RatedVCES; VE……
