器件名称:
MJL21193
功能描述:
Silicon PNP Power Transistor
文件大小:
231.73KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJL21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONS Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -400 -250 -5 UNIT V V Collector Current-Continuous Collector Current-Pulsed Base Current-Continuous w w w s c s .i -16 -30 -5 200 150 -65~150 n c . i m e V A A A W ℃ ℃ PD Tj Tstg Total Power Dissipation (TC=25℃) Junction Temperature Storage Temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER ThermalResistance Junction To Case VALUE 0.7 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=-100mA; IB=0 B MJL21193 MIN -250 TYP. MAX UNIT V IC=-8A ;IB=-0.8A B -1.4 -4 -2.2 -0.1 -0.1 -1 75 V V V mA mA μA IC=-16A ;IB=-3.2A IC=-8A ; VCE=-5V VCE=-……
