器件名称:
2SA872A
功能描述:
Silicon PNP Epitaxial
文件大小:
37.3KB 共7页
简 介:
2SA872, 2SA872A Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA872 –90 –90 –5 –50 300 150 –55 to +150 2SA872A –120 –120 –5 –50 300 150 –50 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA872 Item Collector to emitter breakdown voltage Collector cutoff current Symbol Min V(BR)CEO I CBO 1 2SA872A Max — –0.5 — 800 — Min –120 — — 250 160 Typ — — — — — — — 120 1.8 — Max — — –0.5 800 — –0.75 V –0.5 — — 5.0 V MHz pF dB Unit V A A Test conditions I C = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCE = –100 V, IE = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –0.1 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 A Rg = 50 k f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 250 160 — — — — — –0.75 — –0.5 — — 5.0 — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF — Note: D 250 to 500 E 400 to 800 — 1.5 — — 1.5 dB 1. The 2SA872/A is grouped by h FE1……
