EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>HITACHI> 2SA893A

2SA893A

器件名称: 2SA893A
功能描述: Silicon PNP Epitaxial
文件大小: 24.23KB 共5页
生产厂商: HITACHI
下  载: 在线浏览点击下载
简  介: 2SA893, 2SA893A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SC1890/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA893 –90 –90 –5 –50 300 150 –55 to +150 2SA893A –120 –120 –5 –50 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA893 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SA893A Max — –0.5 — 800 Min Typ Max — — –0.5 800 –0.75 V –0.5 — — 10 V MHz pF dB Unit V A A Test conditions I C = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, I C = –50 A Rg = 50 k, f = 1 kHz Min –90 — — Typ — — — — — — 120 1.8 2 –120 — — — 250 — — — — — 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — –0.75 — –0.5 — — 10 — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF Note: D 1. The 2SA893/A is grouped by h FE as follows. E 400 to 800 250 to 500 See characteristic curves of 2SA872 and 2SA872A 2 2SA893, 2SA893……
相关电子器件
器件名 功能描述 生产厂商
2SA893AETZ Silicon PNP Epitaxial RENESAS
2SA893ADTZ Silicon PNP Epitaxial RENESAS
2SA893A Silicon PNP Epitaxial RENESAS
2SA893A Silicon PNP Epitaxial HITACHI
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2