器件名称:
2SA893A
功能描述:
Silicon PNP Epitaxial
文件大小:
161.47KB 共5页
简 介:
2SA893A Silicon PNP Epitaxial REJ03G0632-0200 (Previous ADE-208-1002) Rev.2.00 Aug.10.2005 Application Low frequency high voltage amplifier Complementary pair with 2SC1890A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –50 300 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA893A Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CEO ICBO hFE*1 VBE VCE(sat) fT Cob NF Min –120 — — 250 — — — — — Typ — — — — — — 120 1.8 2 Max — — –0.5 800 –0.75 –0.5 — — 10 Unit V A A Test conditions IC = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA V V MHz pF dB VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, IC = –50 A Rg = 50 k, f = 1 kHz Note: 1. The 2SA893A is grouped by hFE as follows. D E 400 to 800 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 4 2SA893A Main Characteristics Maximum Collector Dissipation Curve……
