器件名称:
2SC3834
功能描述:
Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
文件大小:
23.04KB 共1页
简 介:
2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3834 200 120 8 7(Pulse14) 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Humidifier, DC-DC Converter, and General Purpose (Ta=25°C) 2SC3834 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF 2.5 B C E 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit A A V 16.0±0.7 8.8±0.2 a b 3.75±0.2 V 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 50 RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (s) 0.5max tstg (s) 3.0max tf (s) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 7 200 mA V CE ( sat ) – I B Characteristics (Typical) 2.6 I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 150 mA mA 6 100 6 Collector Current I C (A) 2 Collector Current I C (A) 5 60mA 40m A 5 4 4 p) Tem mp) (Cas e Te (Ca 1 se 3 20 mA 3 C 1 1 0 0.005 0.01 0 0 1 2 3 4 0.05 0.1 0.5 1 0 0 –30C I B =10mA 25C 125 2 2 (Case Temp 5A ) 3A I C= 1 A 0.5 Base-Emittor Voltage V B E (V……
