器件名称:
0805
功能描述:
RF LDMOS Wideband Integrated Power Amplifiers
文件大小:
594.33KB 共16页
简 介:
Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power — 900 mW PEP Power Gain — 13 dB Efficiency — 38% High Gain, High Efficiency and High Linearity Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters N Suffix Indicates Lead - Free Terminations In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. MW4IC001NR4 MW4IC001MR4 800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case @ 85°C Symbol RθJC Value 27……
