器件名称: CHA3063
功能描述: 5.5-23GHz Driver Amplifier
文件大小: 154.74KB 共7页
简 介:CHA3063
5.5-23GHz Driver Amplifier
GaAs Monolithic Microwave IC Description
The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
24 20 16 Gain Rlosses & NF ( dB ) 12 8
NF dBS21
Main Feature
§ § § § Broad band performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, ± 1dB gain flatness PAE:11%@P-1dB typical Chip size : 1.33 x 0.910x 0.1mm
4 0 -4 -8
dBS11 dBS22
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Frequency ( GHz )
On wafer typical measurements
Main Characteristics
Tamb = +25°C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min 5.5 18 +18 19 +20 160 210 Typ Max 23 Unit GHz dB dBm mA
Id_small_signal Bias current
ESD Protection : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA30632263 -20-Sept.-02 1/7 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3063
Electrical Characteristics on wafer
5.5-23GHz Driver Amplifier
Tamb = +25°C, Vd1 = Vd2 =4V Vg tuned for Id=160mA (around –0.27V) Symbol
Fop G G Is P1dB Psat IP3 VS……
