器件名称:
BS616LV1622TCG55
功能描述:
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
文件大小:
255.57KB 共10页
简 介:
BSI FEATURES Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable DESCRIPTION BS616LV1626 Vcc operation voltage : 4.5 ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current C-grade: 90mA (@70ns) operating current I -grade: 92mA (@70ns) operating current 15uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV1626 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 15uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion. The BS616LV1626 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1626 is available in 48-pin 12mmx20mm TSOP1 package. PRODUCT FAMILY PRODUCT FAMILY OPERATING TEMPERATURE +0 O C to +70 O C -40 O C to +85 O ……
