器件名称:
BS616LV1622TCG55
功能描述:
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
文件大小:
257.54KB 共10页
简 介:
BSI FEATURES Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1622 Wide Vcc operation voltage : 2.4 ~ 5.5V Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current C-grade: 90mA (@70ns) operating current I -grade: 92mA (@70ns) operating current 15uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options I/O Configuration x8/x16 selectable by CIO, LB and UB pin DESCRIPTION The BS616LV1622 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion. The BS616LV1622 has an automatic power down feature, reducing t……
