器件名称:
BAT14
功能描述:
Silicon Schottky Diode
文件大小:
386.71KB 共3页
简 介:
BAT14... Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type BAT14-03W 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT14-03W Package SOD323 Configuration single LS(nH) Marking 1.8 O/white Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value Unit Diode reverse voltage Forward current Total power dissipation TS 85 °C 4 90 100 150 -55 ... 125 -55 ... 150 V mA mW °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Value Unit Junction - soldering point1) 1For 690 K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-03-2003 BAT14... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Differential forward resistance IF = 10mA / 50mA RF 5.5 CT 0.22 0.35 pF Symbol min. V(BR) VF 0.36 0.48 4 Values typ. max. - Unit V 0.43 0.55 0.52 0.66 2 Feb-03-2003 BAT14... Diode capacitance CT = (VR ) f = 1MHz 0.5 pF Reverse current IR = (VR) TA = Parameter 10 1 A 0.4 10 0.35 TA =125°C 0 CT 0.3 0.25 0.2 0.15 0.1 0.05 0 0 V IR TA =85°C 10 -1 TA =25°C 10 -2 0.5 1 1.5 2 2.5 3 3.5 4 5 10 -3 1 1.5 2 2.5 3 3.5 4 4.5 V 5.5 VF VR Forward current IF = (V F)……
