器件名称:
BAT15-03W
功能描述:
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
文件大小:
65.96KB 共4页
简 介:
BAT 15-03W Silicon Schottky Diode DBS mixer applications to 12 GHz Low noise figure Low barrier type ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702Q62702-A1104 Pin Configuration 1=A 2=C Package SOD-323 BAT 15-03W P/white Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation TS = 70°C Operating temperature range Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 4 100 100 - 55 ... + 150 - 55 ... + 150 ≤ 770 ≤ 690 Unit V mA mW °C VR IF Ptot Top Tstg RthJA RthJS K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Mar-19-1996 BAT 15-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 4 0.23 0.32 0.32 0.41 V I(BR) = 5 A Forward voltage VF - IF = 1 mA IF = 10 mA AC characteristics Diode capacitance CT 5.5 0.35 pF - VR = 0 , f = 1 MHz Differential forward resistance RF IF 10mA/ 50 mA Semiconductor Group 2 Mar-19-1996 BAT 15-03W Forward Current IF = f(VF) Reverse current IR = f (TA) Diode capacitance CT = f (VR) f = 1MHz Semiconductor Group 3 Mar-19-1996 BAT 15-03W Package Semiconductor Group 4 Mar-19-1996 ……
