器件名称:
BAT15-03W
功能描述:
Silicon Schottky Diode
文件大小:
92.3KB 共3页
简 介:
BAT 15-03W Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type 2 1 VPS05176 1 2 EHA07001 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 15-03W Maximum Ratings Parameter Marking P/white Pin Configuration 1=C 2=A Symbol Package SOD-323 Value Unit Diode reverse voltage Forward current Total power dissipation, TS = 70 °C Junction temperature Operating temperature range Storage temperature VR IF Ptot Tj Top Tstg 4 100 100 150 -55 ... 150 -55 ... 150 V mA mW °C °C °C Thermal Resistance Junction - ambient 1) RthJA RthJS ≤770 ≤690 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu 1 Oct-07-1999 BAT 15-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics (per diode) Breakdown voltage I(BR) = 5 A Forward voltage IF = 1 mA IF = 10 mA AC characteristics (per diode) Diode capacitance VR = 1 V, f = 1 MHz Forward resistance IF = 10mA / 50mA RF 5.5 CT 0.35 pF Symbol min. V(BR) VF 4 Values typ. max. - Unit V 0.23 0.32 0.32 0.41 2 Oct-07-1999 BAT 15-03W Forward current IF = f (VF ) TA = Parameter 10 2 EHD07079 Reverse current IR = f (VR ) TA = Parameter EHD07081 10 3 ΙF mA 10 1 TA = -40 C 25 C 85 C 125 C ΙR A 10 2 T A =125 C 85 C 10 0 10 1 25 C 10 -1 10 0 10 -2 0.0 10 -1 0.5 V VF 1.0 0 1 2 3 V 4 VR Diode capacitance CT = f (VR) f = 1MHz EHD07082 0.5 CT pF ……
