器件名称:
BC212L
功能描述:
PNP General Purpose Amplifier
文件大小:
313.42KB 共7页
简 介:
BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Value 50 60 5 300 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA Total Device Dissipation Derate above 25°C TA = 25°C unless otherwise noted Characteristic Max 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W Rev. A 7/24/00 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2000 Fairchild Semiconductor International BC212L PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = ……
