HID灯镇流器中UniFET II MOSFET的性能和效率

　　如表1所示，UniFET IIMOSFET系列具有较好的反向恢复性能。 使用普通MOSFET和FRD的传统解决方案与UniFET II UltraFRFETMOSFET之间的直通电流比较结果如图12所示。 在使用2个普通MOSFET和4个FRD的传统解决方案中，测得的反向恢复电流峰值为11.44 A。　　

结论

　　在本文中，介绍了将全新平面MOSFET(UniFET II MOSFET)用于HID灯镇流器的混频全桥逆变器来实现更高的可靠性。 UniFET II MOSFET具有出色的dv/dt强度、反向恢复特性(比如：恢复时间短、反向恢复电流低)以及较低的电荷。 因此，在注重MOSFET体二极管性能的开关逆变器应用中，它可确保更高的可靠性。 为了验证新MOSFET的有效性，用带混频全桥逆变器的150 W室内HID灯镇流器进行了实验。 实验结果表明，UniFET II MOSFET可以提高逆变器系统的可靠性，同时还可以通过去除其他二极管降低制造成本。

　　参考文献

　　[1] Choi W-S, Young S-M, Kim D-W.Analysis of MOSFET failure modes in LLC resonant converter[C]. INTELEC '09.(2009) 1-6
　　[2] Busatto G, Fioretto O, Patti A. Non-destructive testing of power MOSFET's failures during reverse recovery of drain-source diode[C]. PESC '96., (1996) 593-599,
　　[3] Fiel A, Wu T. MOSFET failure modes in the zero-voltage-switched full-bridge switching mode power supply applications[C]. APEC '01.(2001)1247-1252
　　[4] Blackburn D.L.Power MOSFET failure revisited[C]. PESC '88.( 1998) 681-688,
　　[5] Burra R.K., Shenai K. CoolMOS integral diode: a simple analytical reverse recovery model 2003[C]. PESC '03. (2003) 834 – 838
　　[6] Chimento F, Musumeci S, Raciti A, Melito M, Sorrentino G.Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter [C]. IECON '06 (2006) 2067 - 2072
　　[7] Sakakibara J, Noda Y, Shibata T, Nogami S, Yamaoka T, Yamaguchi H. 600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure[C]. ISPSD '08, (2008) 299-302
　　[8] Yeon J.E, Kim C.K, Jung M.S, Kim W.T, Cho K.M, Kim H.J. Effectiveness ofFRFET® MOSFETs for the CCFL inverters in LCD TVs[C]. SPEEDAM '08.(2008) 1351-1355,
　　[9] Singh P. Power MOSFET failure mechanisms, INTELEC '04[C]. (2004) 499-502
　　[10] Jung J, Li X.Analysis of the MOSFET Failure In a Junction-Isolated Power Integrated Circuit[C]. ISPSD '07.(2007) 249-252
　　[11] Busatto G, Persiano G.V., Iannuzzo F. Experimental and numerical investigation on MOSFET's failure during reverse recovery of its internal diode[R]. IEEE Transactions on Electron Devices, Vol 46, (1999) 1268-1273
　　[12] Cester A, Paccagnella A,GhidiniG, Deleonibus S, Guegan G.Collapse of MOSFET drain current after soft breakdown[R]. IEEE Transactions on Power electronics, Vol 4, (2004) 63-72
　　[13] Catania M. F, Frisina F, Tavolo N, Ferla G, Coffa S, Campisano S U. Optimization of the trade-off between switching speed of the internal diode and on-resistance in gold and platinum implanted power metal-oxide-semi -conductor devices[R]. IEEE Trans. Electron Devices, vol. 39,(1992) 2745–2749
　　[14] B. J. Baliga, J. P. Walden.Improving the reverse recovery of power MOSFET integral diode by electron irradiation[R]. Solid State Electron.vol. 38,(1993) 1133–1141, 1993
　　[15] Aigner H., Dierberger K, Grafham D. Improving the full-bridge phase-shift ZVT converter for failure-free operation under extreme conditions in welding and similar applications[R]. Industry Applications Conference '98.(1998) 1341-1348
　　[16] D.S Kim, J.E Yeon, K.M Cho, H.J Kim.Effectiveness of UltraFRFET™ for the HV-BLU system in LCD TVs[C]. INTELEC '09. (2009) 1-6
　　[17] Kang WS, Yeon JE, Kim HJ, Ahn TY.Reliability improvement of FB inverter in HID lamp ballast using UniFET™ II MOSFET family[C]. INTELEC ’11.(2011)