器件名称:
TIP126
功能描述:
Si-Epitaxial PlanarTransistors
文件大小:
49.48KB 共2页
简 介:
TIP125, TIP126, TIP127 PNP Version 2004-07-01 Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Collector current – Kollektorstrom Plastic case Kunststoffgehuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert 1 = B1 2 = C2 3 = E2 5A TO-220AB 2.2 g Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) TIP125 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage B open E open C open - VCE0 - VCB0 - VEB0 Ptot Ptot - IC - IB Tj TS 60 V 60 V Grenzwerte (TA = 25°C) TIP126 80 V 80 V 50 V 2 W 1) 65 W 5A 8A 120 mA - 65…+ 150°C - 65…+ 150°C TIP127 100 V 100 V Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung TC = 25°C Collector current – Kollektorstrom (dc) Base current – Basisstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Peak Collector current – Kollektor-Spitzenstrom - ICM Characteristics (Tj = 25°C) Min. Collector-Emitter cutoff current – Kollektorreststrom IB = 0, - VCE = 30 V IB = 0, - VCE = 40 V IB = 0, - VCE = 50 V IE = 0, - VCB = 60 V IE = 0, - VCB = 80 V IE = 0, - VCB = 100 V 1 Kennwerte (Tj = 25°C) Typ. – – – – – – Max. 500 nA 500 nA 500 nA 200 nA 200 nA 200 nA TIP125 TIP126 TIP127 TIP125 TIP126 TIP127 - ICE0 - ICE0 - ICE0 - ICB0 - ICB0 - ICB0 – – – – – – Collector-Base cutoff current – Kollektorrestst……
