器件名称:
TIP126
功能描述:
PNP/NPN Silicon Power Transistor
文件大小:
768.39KB 共3页
简 介:
TIP120 Series PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free 1 FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC R JA R JC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Storage Temperature TIP120 TIP125 60 60 TIP121 TIP126 80 80 5 5 2 62.5 1.92 150 -55-150 TIP122 TIP127 100 100 2 3 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Units V V V A W ℃/W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter TIP120,TIP125 Collector-base breakdown voltage TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 Collector-emitter breakdown voltage TIP121,TIP126 TIP122,TIP127 Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 ICBO VCB=60V, I E=0 VCB=80V, I E=0 VCB=100V, I E =0 VCE=30V, I B=0 VCE=40V, I B=0 VCE=50V, I B=0 VEB=5V, I C=0 VCE=3V, I C=0.5A VCE=3V, I C=3A IC=3A, IB =12mA IC=5A, IB =20mA VCE=3V, IC =3A VCB=10V, IE =0A f = 0.1MHz 1000 1000 2 4 2.5 300 200 V V pF Symbol V(BR)CBO Test conditions MIN 60 80 100 60 80 100 MAX UNIT V IC=1mA, I E=0 VCEO(SUS) IC=30mA, I B=0 V 0.2 mA Collector cut-off current ICEO IEBO hFE(1) 0.5 2 mA mA ……
