器件名称:
TIP126
功能描述:
Si-Epitaxial Planar Darlington Power Transistors
文件大小:
110.52KB 共2页
简 介:
TIP125 ... TIP127 TIP125 ... TIP127 PNP Version 2006-10-17 10±0.2 3 4 3.8 Type Typ Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren Max. power dissipation with cooling Max. Verlustleistung mit Kühlung Collector current Kollektorstrom Plastic case Kunststoffgehuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen PNP 65 W 5A TO-220AB 2.2 g 15.7 1 2 3 13.2 1.5 0.9 2.54 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spg. Collector-Base-voltage – Kollektor-Basis-Spg. Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25°C TC = 25°C Ptot Ptot - IC - ICM - IB Tj TS B open E open C open - VCEO - VCBO - VEBO 60 V 60 V 3.4 Grenzwerte (TA = 25°C) TIP125 TIP126 80 V 80 V 5V 2 W 1) 65 W 5A 8A 120 mA -55...+150°C -55…+150°C TIP127 100 V 100 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhltnis 2) - IC = 0.5 A, - VCE = 3 V - IC = 3 A, - VCE = 3 V Small signal current gain – Kleinsignal-Stromverstrkung - IC = 3 A, - VCE = 4 ……
