器件名称:
TIP29
功能描述:
High Power Bipolar Transistor
文件大小:
335.68KB 共6页
简 介:
TIP29, 30 High Power Bipolar Transistor Features: Collector-Emitter sustaining voltageVCEO(sus) = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA. Dimensions A B C D E F G H I J K Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). L M O Minimum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70 Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90 NPN TIP29A TIP29C PNP TIP30A TIP30C 1.0 Ampere Complementary Silicon Power Transistors 40 - 100 Volts 30 Watts TO-220 Dimensions : Millimetres Page 1 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG TIP29A TIP30A 60 5.0 1.0 3.0 0.4 30 0.24 -65 to +150 W W/°C °C TIP29C TIP30C 100 V Unit A THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Case Symbol Rθjc Maximum 4.167 Unit °C/W Figure - 1 Power Derating Page 2 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic OFF Characteristics Collector-Emitter Sustaining Vol……